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PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22 IRHYS63234CM 300K Rads (Si) 0.22 ID 12A 12A IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY International Rectifier's R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Low-Ohmic TO-257AA Features: n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 12 7.6 48 75 0.6 20 80 12 7.5 5.2 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g 300 (0.063 in. /1.6 mm from case for 10s) 4.3 (Typical) www.irf.com 1 05/08/06 IRHYS67234CM Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 250 -- -- 2.0 8.6 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.26 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.22 4.0 -- 10 25 100 -100 40 12 12 19 27 36 20 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 7.6A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 7.6A A VDS= 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 12A VDS = 125V VDD = 125V, ID = 12A V GS =12V, RG = 7.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance -- -- -- -- 1420 184 2.2 0.98 -- -- -- -- pF Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- 12 -- 48 -- 1.2 -- 620 -- 5.0 Test Conditions A V ns C Tj = 25C, IS = 12A, VGS = 0V A Tj = 25C, IF = 12A, di/dt 100A/s VDD 50V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max -- -- -- -- 1.67 80 Units C/W Test Conditions Typical Socket Mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHYS67234CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (Low Ohmic TO-257) Diode Forward Voltage Up to 300K Rads (Si) Min 250 2.0 -- -- -- -- -- -- Max Units V nA A V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS=120V, VGS=0V VGS = 12V, ID = 7.6A VGS = 12V, ID = 7.6A VGS = 0V, ID = 12A -- 4.0 100 -100 10 0.24 0.22 1.2 Part numbers IRHYS67234CM and IRHYS63234CM International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET (MeV/(mg/cm )) Ag Xe Au 43 59 90 2 Energy (MeV) 1217 823 1480 Range (m) 112 66 80 @VGS = @VGS = VDS (V) @VGS = @VGS = @VGS = @VGS = 0V 250 250 75 -5V 250 250 75 -10V 250 250 - -15V 250 50 - -17V 100 - -20V 50 - 300 250 200 150 100 50 0 0 -5 -10 VGS -15 -20 VDS Ag Xe Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHYS67234CM Pre-Irradiation 100 VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 10 5.0V 1 5.0V 20s PULSE WIDTH Tj = 25C 1 20s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID = 12A 2.0 ID, Drain-to-Source Current (A) T J = 150C 10 T J = 25C 1.5 1.0 VDS = 50V 20s PULSE WIDTH 15 1 5 5.5 6 6.5 7 7.5 8 8.5 9 VGS, Gate-to-Source Voltage (V) 0.5 VGS = 12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHYS67234CM 2800 2400 2000 1600 1200 800 400 0 1 VGS, Gate-to-Source Voltage (V) 100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 12A 16 VDS = 200V 6 VDS = 125V VDS = 50V C, Capacitance (pF) Ciss Coss 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 8 16 24 32 40 48 Crss 10 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R (on) DS 10 T J = 150C 1 T J = 25C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10 100s 1 0.1 VGS = 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) 1ms Tc = 25C Tj = 150C Single Pulse 1 10 100 10ms 1000 0.1 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHYS67234CM Pre-Irradiation 12 10 ID, Drain Current (A) VGS RG VGS VDS RD D.U.T. + 8 6 4 2 0 25 50 75 100 125 150 10% VGS td(on) tr t d(off) tf Pulse Width 1 s Duty Factor 0.1 % -V DD Fig 10a. Switching Time Test Circuit VDS 90% T C , Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.1 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHYS67234CM 160 EAS , Single Pulse Avalanche Energy (mJ) 15V TOP 120 BOTTOM ID 5.4A 7.6A 12A VDS L DRIVER RG D.U.T. IAS tp 80 + - VDD A VGS 20V 0.01 40 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V(BR)DSS tp Starting T J , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 12 V QGS QGD VGS 3mA D.U.T. + V - DS VG Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHYS67234CM Pre-Irradiation A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 1.1mH Peak IL = 12A, VGS = 12V A ISD 12A, di/dt 508A/s, VDD 250V, TJ 150C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. Case Outline and Dimensions -- Low-Ohmic TO-257AA A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035] 13.63 [.537] 13.39 [.527] 1 2 3 16.89 [.665] 16.39 [.645] 10.92 [.430] 10.42 [.410] B C 15.88 [.625] 12.70 [.500] 0.71 [.028] MAX. 2.54 [.100] 2X 3X O 0.88 [.035] 0.64 [.025] CA B 3.05 [.120] O 0.50 [.020] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. LEAD ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2006 8 www.irf.com |
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